Flexible Electronics News

Infineon Pioneers World’s First 300 mm Power GaN

300 mm GaN will help achieve cost parity with silicon over time.

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By: DAVID SAVASTANO

Editor, Ink World Magazine

Infineon Technologies AG announced that the company has succeeded in developing the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon is the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment. The breakthrough will help substantially drive the market for GaN-based power semiconductors. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient co...

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